User manual JBL UREI BX63
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Manual abstract: user guide JBL UREI BX63
Detailed instructions for use are in the User's Guide.
[. . . ] Sourced from Process 55.
Absolute Maximum Ratings*
Symbol
VDG VGS IGF TJ, Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current
TA = 25°C unless otherwise noted
Parameter
Value
25 - 25 10 -55 to +150
Units
V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. [. . . ] Sourced from Process 55.
Absolute Maximum Ratings*
Symbol
VDG VGS IGF TJ, Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current
TA = 25°C unless otherwise noted
Parameter
Value
25 - 25 10 -55 to +150
Units
V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5457-5459 625 5. 0 125 357
Max
*MMBF5457-5459 350 2. 8 556
Units
mW mW/°C °C/W °C/W
*Device mounted on FR-4 PCB 1. 6" X 1. 6" X 0. 06. "
1997 Fairchild Semiconductor Corporation
2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
N-Channel General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage IG = 10 µA, VDS = 0 VGS = -15 V, VDS = 0 VGS = -15 V, VDS = 0, TA = 100°C 5457 VDS = 15 V, ID = 10 nA 5458 5459 VDS = 15 V, ID = 100 µA 5457 VDS = 15 V, ID = 200 µA 5458 VDS = 15 V, ID = 400 µA 5459 - 25 - 1. 0 - 200 - 6. 0 - 7. 0 - 8. 0 - 2. 5 - 3. 5 - 4. 5 V nA nA V V V V V V
- 0. 5 - 1. 0 - 2. 0
VGS
Gate-Source Voltage
ON CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, VGS = 0 5457 5458 5459 1. 0 2. 0 4. 0 3. 0 6. 0 9. 0 5. 0 9. 0 16 mA mA mA
SMALL SIGNAL CHARACTERISTICS
gfs Forward Transfer Conductance* VDS = 15 V, VGS = 0, f = 1. 0 kHz 5457 5458 5459 VDS = 15 V, VGS = 0, f = 1. 0 kHz VDS = 15 V, VGS = 0, f = 1. 0 MHz VDS = 15 V, VGS = 0, f = 1. 0 MHz VDS = 15 V, VGS = 0, f = 1. 0 kHz, RG = 1. 0 megohm, BW = 1. 0 Hz 1000 1500 2000 10 4. 5 1. 5 5000 5500 6000 50 7. 0 3. 0 3. 0 µmhos µmhos µmhos µmhos pF pF dB
gos Ciss Crss NF
Output Conductance* Input Capacitance Reverse Transfer Capacitance Noise Figure
*Pulse Test: Pulse Width 300 ms, Duty Cycle 2%
5
Typical Characteristics
Transfer Characteristics Transfer Characteristics
2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
N-Channel General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Transfer Characteristics
Transfer Characteristics
Common Drain-Source
Parameter Interaction
Output Conductance vs. Drain Current
2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
N-Channel General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Channel Resistance vs. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. [. . . ] Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. [. . . ]
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